Non-Volatile MB85RC256V 32KB FRAM Breakout Board Memory IC 12C Development Tool 2.7-5.5V for IoT Sensor Portable Wearable Device
Non-Volatile MB85RC256V 32KB FRAM Breakout Board Memory IC 12C Development Tool 2.7-5.5V for IoT Sensor Portable Wearable Device
brand: DIYTECH SKU:DT1243-02
Regular price
$8.69
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- Free return Within 60 days
- Consultancyservice@diytech.cc
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Features:?
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FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
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Specifications:?
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Condition: 100% brand new?
Addr: 1010+A2+A1+A0?
Default: 0 x 50?
VCC/Logic: 2.7-5.5V?
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Package Included:?
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1 x FRAM Breakout Board?
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$0.06{"id":4521875669079,"title":"Non-Volatile MB85RC256V 32KB FRAM Breakout Board Memory IC 12C Development Tool 2.7-5.5V for IoT Sensor Portable Wearable Device","handle":"non-volatile-mb85rc256v-32kb-fram-breakout-board-memory-ic-12c-development-tool-2-7-5-5v-for-iot-sensor-portable-wearable-device","description":"\u003cp\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cspan style=\"font-size: x-large;\"\u003e\u003c\/span\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cp\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cimg src=\"http:\/\/ae01.alicdn.com\/kf\/HTB12JMgilsmBKNjSZFsq6yXSVXaS.jpg\"\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cspan style=\"font-size: x-large;\"\u003e\u003c\/span\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cdiv\u003e\u003cspan style=\"color: #ff0000;\"\u003e\u003cstrong\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFeatures:?\u003c\/span\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFRAM is non-volatile and can easily be read\/written 10 trillion times.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eThe FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eEach byte can be read and 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style=\"font-size: 16.0px;\"\u003eFeatures:?\u003c\/span\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFRAM is non-volatile and can easily be read\/written 10 trillion times.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eThe FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eEach byte 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$0.06{"id":4521875669079,"title":"Non-Volatile MB85RC256V 32KB FRAM Breakout Board Memory IC 12C Development Tool 2.7-5.5V for IoT Sensor Portable Wearable Device","handle":"non-volatile-mb85rc256v-32kb-fram-breakout-board-memory-ic-12c-development-tool-2-7-5-5v-for-iot-sensor-portable-wearable-device","description":"\u003cp\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cspan style=\"font-size: x-large;\"\u003e\u003c\/span\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cp\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cp\u003e\u003cimg src=\"http:\/\/ae01.alicdn.com\/kf\/HTB12JMgilsmBKNjSZFsq6yXSVXaS.jpg\"\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cspan style=\"font-size: x-large;\"\u003e\u003c\/span\u003e\u003c\/strong\u003e?\u003c\/p\u003e\n\u003cdiv\u003e\u003cspan style=\"color: #ff0000;\"\u003e\u003cstrong\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFeatures:?\u003c\/span\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFRAM is non-volatile and can easily be read\/written 10 trillion times.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eThe FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eEach byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"color: #ff0000;\"\u003e\u003cstrong\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eSpecifications:?\u003c\/span\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eCondition: 100% brand new?\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eAddr: 1010+A2+A1+A0?\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eDefault: 0 x 50?\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eVCC\/Logic: 2.7-5.5V?\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"color: #ff0000;\"\u003e\u003cstrong\u003e\u003cspan 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style=\"font-size: 16.0px;\"\u003eFeatures:?\u003c\/span\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e?\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eFRAM is non-volatile and can easily be read\/written 10 trillion times.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eIt is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eThe FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.\u003c\/span\u003e\u003c\/div\u003e\n\u003cdiv\u003e\u003cspan style=\"font-size: 16.0px;\"\u003eEach byte 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